CUED Publications database

Modelling 2DEG charges in AlGaN/GaN heterostructures

Longobardi, G and Udrea, F and Sque, S and Croon, J and Hurkx, F and Napoli, E and Šonský, J (2012) Modelling 2DEG charges in AlGaN/GaN heterostructures. Proceedings of the International Semiconductor Conference, CAS, 2. pp. 363-366.

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Abstract

In this paper we compare different approaches to calculating the charge density in the 2DEG layer of AlGaN/GaN HEMTs. The methods used are (i) analytical theory implemented in MATLAB, (ii) finite-element analysis using semiconductor TCAD software that implements only the Poisson and continuity equations, and (iii) 1D software that solves the Poisson and Schrödinger equations self-consistently. By using the 1D Poisson-Schrödinger solver, we highlight the consequences of neglecting the Schrödinger equation. We conclude that the TCAD simulator predicts with a reasonable level of accuracy the electron density in the 2DEG layer for both a conventional HEMT structure and one featuring an extra GaN cap layer. In addition, while the sheet charge density is not significantly affected by including Schrödinger, its confinement in the channel is found to be modified. © 2012 IEEE.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:49
Last Modified: 08 Dec 2014 02:30
DOI: 10.1109/SMICND.2012.6400760