CUED Publications database

The lateral superjunction PSOI LIGBT and LDMOSFET

Antoniou, M and Tee, EKC and Pilkington, SJ and Pal, DK and Udrea, F and Dietrich Hoelke, A (2012) The lateral superjunction PSOI LIGBT and LDMOSFET. In: UNSPECIFIED pp. 351-354..

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This paper presents a comparison between the superjunction LIGBT and the LDMOSFET in partial silicon-on-insulator (PSOI) technology in 0.18μm PSOI HV process. The superjunction drift region helps in achieving uniform electric field distribution in both structures but also contributes to the on-state current in the LIGBT. The superjunction LIGBT successfully achieves breakdown voltage (BV) of 210V with R dson of 765mΩ.mm2. It exhibits reduced specific on-state resistance R dson and higher saturation current (I dsat ) for the same BV compared to a compatible lateral superjunction LDMOS in the same technology. © 2012 IEEE.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:25
Last Modified: 19 Oct 2017 01:29