Antoniou, M and Tee, EKC and Pilkington, SJ and Pal, DK and Udrea, F and Dietrich Hoelke, A (2012) The lateral superjunction PSOI LIGBT and LDMOSFET. In: UNSPECIFIED pp. 351-354..Full text not available from this repository.
This paper presents a comparison between the superjunction LIGBT and the LDMOSFET in partial silicon-on-insulator (PSOI) technology in 0.18μm PSOI HV process. The superjunction drift region helps in achieving uniform electric field distribution in both structures but also contributes to the on-state current in the LIGBT. The superjunction LIGBT successfully achieves breakdown voltage (BV) of 210V with Rdson of 765mΩ.mm2. It exhibits reduced specific on-state resistance Rdson and higher saturation current (Idsat) for the same BV compared to a compatible lateral superjunction LDMOS in the same technology. © 2012 IEEE.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||09 Dec 2016 17:41|
|Last Modified:||09 Dec 2016 23:08|