Brezeanu, M and Dumitru, V and Costea, S and Ali, SZ and Udrea, F and Gologanu, M and Bostan, C and Georgescu, I and Avramescu, V and Buiu, O (2012) SOI membrane-based pressure sensor in stress sensitive differential amplifier configuration. Proceedings of the International Semiconductor Conference, CAS, 1. pp. 153-156.Full text not available from this repository.
This paper introduces a pressure sensing structure configured as a stress sensitive differential amplifier (SSDA), built on a Silicon-on-Insulator (SOI) membrane. Theoretical calculation show the significant increase in sensitivity which is expected from the pressure sensors in SSDA configuration compared to the traditional Wheatstone bridge circuit. Preliminary experimental measurements, performed on individual transistors placed on the membrane, exhibit state-the-art sensitivity values (1.45mV/mbar). © 2012 IEEE.
|Uncontrolled Keywords:||Piezoresistive Pressure Sensor SOI Stress Sensitive Differential Amplifier (SSDA)|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 12:11|
|Last Modified:||08 Dec 2014 02:30|