De La Rosa, CJL and Sun, J and Lindvall, N and Cole, MT and Nam, Y and Löffler, M and Olsson, E and Teo, KBK and Yurgens, A (2013) Frame assisted H<inf>2</inf>O electrolysis induced H<inf>2</inf> bubbling transfer of large area graphene grown by chemical vapor deposition on Cu. Applied Physics Letters, 102. ISSN 0003-6951Full text not available from this repository.
An improved technique for transferring large area graphene grown by chemical vapor deposition on copper is presented. It is based on mechanical separation of the graphene/copper by H2 bubbles during H2O electrolysis, which only takes a few tens of seconds while leaving the copper cathode intact. A semi-rigid plastic frame in combination with thin polymer layer span on graphene gives a convenient way of handling- and avoiding wrinkles and holes in graphene. Optical and electrical characterizations prove the graphene quality is better than that obtained by traditional wet etching transfer. This technique appears to be highly reproducible and cost efficient. © 2013 American Institute of Physics.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
Div B > Electronics, Power & Energy Conversion
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||18 May 2016 17:47|
|Last Modified:||25 Aug 2016 02:51|