Kaiser, AB and Gómez-Navarro, C and Sundaram, RS and Burghard, M and Kern, K (2009) Electrical conduction mechanism in chemically derived graphene monolayers. Nano Lett, 9. pp. 1787-1792.
Full text not available from this repository.Abstract
We have performed a detailed study of the intrinsic electrical conduction process in individual monolayers of chemically reduced graphene oxide down to a temperature of 2 K. The observed conductance can be consistently interpreted in the framework of two-dimensional variable-range hopping in parallel with electric-field-driven tunneling. The latter mechanism is found to dominate the electrical transport at very low temperatures and high electric fields. Our results are consistent with a model of highly conducting graphene regions interspersed with disordered regions, across which charge carrier hopping and tunneling are promoted by strong local electric fields.
| Item Type: | Article |
|---|---|
| Subjects: | UNSPECIFIED |
| Divisions: | UNSPECIFIED |
| Depositing User: | Cron Job |
| Date Deposited: | 20 Feb 2013 15:10 |
| Last Modified: | 22 May 2013 19:00 |
| DOI: | 10.1021/nl803698b |
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