Sundaram, RS and Engel, M and Lombardo, A and Krupke, R and Ferrari, AC and Avouris, P and Steiner, M (2012) Electroluminescence in Single Layer MoS2. Nano Lett., 13. 1416-.Full text not available from this repository.
We detect electroluminescence in single layer molybdenum disulphide (MoS2) field-effect transistors built on transparent glass substrates. By comparing absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find that they all involve the same excited state at 1.8eV. The electroluminescence has pronounced threshold behavior and is localized at the contacts. The results show that single layer MoS2, a direct band gap semiconductor, is promising for novel optoelectronic devices, such as 2-dimensional light detectors and emitters.
|Depositing User:||Cron Job|
|Date Deposited:||20 Feb 2013 15:10|
|Last Modified:||18 Nov 2013 01:10|
Actions (login required)