Sundaram, RS and Gomez-Navarro, C and Lee, EJH and Burghard, M and Kern, K (2009) Noninvasive metal contacts in chemically derived graphene devices. Applied Physics Letters, 95. ISSN 0003-6951Full text not available from this repository.
We study the properties of gold contacts on chemically derived graphene devices by scanning photocurrent microscopy and gate-dependent electrical transport measurements. In the as-fabricated devices, negligible potential barriers are found at the gold/graphene interface, reflecting the noninvasive character of the contacts. Device annealing above 300 °C leads to the formation of potential barriers at the contacts concomitant with metal-induced p -type doping of the sheet as a consequence of the diffusion of gold from the electrodes. The transfer characteristics of the chemically derived graphene devices point toward the suppression of Klein tunneling in this material. © 2009 American Institute of Physics.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 12:20|
|Last Modified:||08 Dec 2014 02:29|