CUED Publications database

Noninvasive metal contacts in chemically derived graphene devices

Sundaram, RS and Gomez-Navarro, C and Lee, EJH and Burghard, M and Kern, K (2009) Noninvasive metal contacts in chemically derived graphene devices. Applied Physics Letters, 95. ISSN 0003-6951

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Abstract

We study the properties of gold contacts on chemically derived graphene devices by scanning photocurrent microscopy and gate-dependent electrical transport measurements. In the as-fabricated devices, negligible potential barriers are found at the gold/graphene interface, reflecting the noninvasive character of the contacts. Device annealing above 300 °C leads to the formation of potential barriers at the contacts concomitant with metal-induced p -type doping of the sheet as a consequence of the diffusion of gold from the electrodes. The transfer characteristics of the chemically derived graphene devices point toward the suppression of Klein tunneling in this material. © 2009 American Institute of Physics.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:20
Last Modified: 08 Dec 2014 02:29
DOI: 10.1063/1.3270533