CUED Publications database

End-of-range defects in germanium and their role in boron deactivation

Panciera, F and Fazzini, PF and Collet, M and Boucher, J and Bedel, E and Cristiano, F (2010) End-of-range defects in germanium and their role in boron deactivation. Applied Physics Letters, 97. ISSN 0003-6951

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We investigated the thermal evolution of end-of-range (EOR) defects in germanium and their impact on junction thermal stability. After solid-phase epitaxial regrowth of a preamorphized germanium layer, EOR defects exhibiting dislocation loop-like contrast behavior are present. These defects disappear during thermal annealing at 400 °C, while boron electrical deactivation occurs. After the whole defect population vanishes, boron reactivation is observed. These results indicate that germanium self-interstitials, released by EOR defects, are the cause of B deactivation. Unlike in Si, the whole deactivation/reactivation cycle in Ge is found to take place while the maximum active B concentration exceeds its solubility limit. © 2010 American Institute of Physics.

Item Type: Article
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:18
Last Modified: 19 Nov 2020 10:19
DOI: 10.1063/1.3456537