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Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths

Shakoor, A and Lo savio, R and Cardile, P and Portalupi, SL and Gerace, D and Welna, K and Boninelli, S and Franzò, G and Priolo, F and Krauss, TF and Galli, M and O'Faolain, L (2013) Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths. Laser and Photonics Reviews, 7. pp. 114-121. ISSN 1863-8880

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Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300-1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enhance the electrically driven emission in a device via Purcell effect. A narrow (Δλ=0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects and other important silicon photonics applications. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Item Type: Article
Uncontrolled Keywords: Nano light sources Optically active defects Photonic crystal cavity Silicon light emission Silicon photonics
Divisions: Div B > Photonics
Depositing User: Cron job
Date Deposited: 04 Feb 2015 22:43
Last Modified: 06 Jun 2015 11:11
DOI: 10.1002/lpor.201200043