Shakoor, A and Lo Savio, R and Portalupi, SL and Gerace, D and Andreani, LC and Galli, M and Krauss, TF and Ofaolain, L (2012) Enhancement of room temperature sub-bandgap light emission from silicon photonic crystal nanocavity by Purcell effect. Physica B: Condensed Matter, 407. pp. 4027-4031. ISSN 0921-4526Full text not available from this repository.
We report the enhancement of sub-bandgap photoluminescence from silicon via the Purcell effect. We couple the defect emission from silicon, which is believed to be due to hydrogen incorporation into the lattice, to a photonic crystal (PhC) nanocavity. We observe an up to 300-fold enhancement of the emission at room temperature at 1550 nm, as compared to an unpatterned sample, which is then comparable to the silicon band-edge emission. We discuss the possibility of enhancing this emission even further by introducing additional defects by ion implantation, or by treating the silicon PhC nanocavity with hydrogen plasma. © 2011 Elsevier B.V.
|Uncontrolled Keywords:||Defect luminescence Nanocavity Photonic crystal Purcell effect Silicon light emission Silicon photonics|
|Divisions:||Div B > Photonics|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 11:27|
|Last Modified:||08 Dec 2014 02:28|