Cardile, P and Franz, G and Lo Savio, R and Galli, M and Krauss, TF and Priolo, F and O'Faolain, L (2011) Electrical conduction and optical properties of doped silicon-on-insulator photonic crystals. Applied Physics Letters, 98. ISSN 0003-6951Full text not available from this repository.
We investigate the electrical properties of silicon-on-insulator (SOI) photonic crystals as a function of both doping level and air filling factor. The resistance trends can be clearly explained by the presence of a depletion region around the sidewalls of the holes that is caused by band pinning at the surface. To understand the trade-off between the carrier transport and the optical losses due to free electrons in the doped SOI, we also measured the resonant modes of L3 photonic crystal nanocavities and found that surprisingly high doping levels, up to 1018 / cm3, are acceptable for practical devices with Q factors as high as 4× 104. © 2011 American Institute of Physics.
|Divisions:||Div B > Photonics|
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||15 Dec 2015 13:15|
|Last Modified:||28 Apr 2016 22:40|