CUED Publications database

Thermal evolution of Er silicate thin films grown by rf magnetron sputtering

Lo Savio, R and Miritello, M and Iacona, F and Piro, AM and Grimaldi, MG and Priolo, F (2008) Thermal evolution of Er silicate thin films grown by rf magnetron sputtering. Journal of Physics Condensed Matter, 20. ISSN 0953-8984

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Stoichiometric Er silicate thin films, monosilicate (Er 2 SiO 5 ) and disilicate (Er 2 Si 2 O 7 ), have been grown on c-Si substrates by rf magnetron sputtering. The influence of annealing temperature in the range 1000-1200 °C in oxidizing ambient (O 2 ) on the structural and optical properties has been studied. In spite of the known reactivity of rare earth silicates towards silicon, Rutherford backscattering spectrometry shows that undesired chemical reactions between the film and the substrate can be strongly limited by using rapid thermal treatments. Monosilicate and disilicate films crystallize at 1100 and 1200 °C, respectively, as shown by x-ray diffraction analysis; the crystalline structures have been identified in both cases. Moreover, photoluminescence (PL) measurements have demonstrated that the highest PL intensity is obtained for Er 2 Si 2 O 7 film annealed at 1200 °C. In fact, this treatment allows us to reduce the defect density in the film, in particular by saturating oxygen vacancies, as also confirmed by the increase of the lifetime of the PL signal. © 2008 IOP Publishing Ltd.

Item Type: Article
Divisions: Div B > Photonics
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:25
Last Modified: 26 Oct 2017 01:48