Miritello, M and Lo Savio, R and Iacona, F and Franzò, G and Bongiorno, C and Priolo, F (2008) Synthesis and luminescence properties of erbium silicate thin films. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 146. pp. 29-34. ISSN 0921-5107Full text not available from this repository.
We have studied the structure and the room temperature luminescence of erbium silicate thin films deposited by rf magnetron sputtering. Films deposited on silicon oxide layers are characterized by good structural properties and excellent stability. The optical properties of these films are strongly improved by rapid thermal annealing processes performed in the range of temperature 800-1250 °C. In fact through the reduction of the defect density of the material, a very efficient room temperature photoluminescence at 1535 nm is obtained. We have also investigated the influence of the annealing ambient, by finding that treatments in O2 atmosphere are significantly more efficient in improving the optical properties of the material with respect to processes in N2. Upconversion effects become effective only when erbium silicate is excited with high pump powers. The evidence that all Er atoms (about 1022 cm-3) in erbium silicate films are optically active suggests interesting perspectives for optoelectronic applications of this material. © 2007 Elsevier B.V. All rights reserved.
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|Date Deposited:||16 Jul 2015 13:07|
|Last Modified:||28 Aug 2015 00:23|