CUED Publications database

Erbium doped materials for a Si-based microphotonics

Priolo, F and Franzò, G and Iacona, F and Irrera, A and Lo Savio, R and Miritello, M and Pecora, E (2008) Erbium doped materials for a Si-based microphotonics. Solid State Phenomena, 131-13. pp. 563-570. ISSN 1012-0394

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We have investigated the role of the Si excess on the photoluminescence properties of Er doped substoichiometric SiO x layers. We demonstrate that the Si excess has two competing roles: when agglomerated to form Si nanoclusters (Si-nc) it enhances the Er excitation efficiency but it also introduces new non-radiative decay channels. When Er is excited through an energy transfer from Si-nc, the beneficial effect on the enhanced excitation efficiency prevails and the Er emission increases with increasing Si content. Nevertheless the maximum excited Er fraction is only of the order of percent. In order to increase the concentration of excited Er ions, a different approach based on Er silicate thin film has been explored. Under proper annealing conditions, an efficient luminescence at 1535 nm is found and all of the Er ions in the material is optically active. The possibility to efficiently excite Er ions also through electron-hole mediated processes is demonstrated in nanometer-scale Er-Si-O/Si multilayers. These data are presented and discussed.

Item Type: Article
Divisions: Div B > Photonics
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:25
Last Modified: 15 May 2018 01:54