Miritello, M and Lo Savio, R and Iacona, F and Franzò, G and Bongiorno, C and Irrera, A and Priolo, F (2006) The influence of substrate on the properties of Er2O3 films grown by magnetron sputtering. Journal of Luminescence, 121. pp. 233-237. ISSN 0022-2313Full text not available from this repository.
The structural properties and the room temperature luminescence of Er2O3 thin films deposited by RF magnetron sputtering have been studied. Films characterized by good morphological properties have been obtained by using a SiO2 interlayer between the film and the Si substrate. The evolution of the properties of the Er2O3 films due to rapid thermal annealing processes in O2 ambient performed at temperatures in the range 800-1200 °C has been investigated in details. The existence of well-defined annealing conditions (temperature of 1100 °C or higher) allowing to avoid the occurrence of extensive chemical reactions with the oxidized substrate has been demonstrated and an increase of the photoluminescence (PL) intensity by about a factor of 40 with respect to the as deposited material has been observed. The enhanced efficiency of the photon emission process has been correlated with the longer lifetime of the PL signal. The same annealing processes are less effective when Er2O3 is deposited on Si. In this latter case interfacial reactions and pit formation occur, leading to a material characterized by stronger non-radiative phenomena that limit the PL efficiency. © 2006 Elsevier B.V. All rights reserved.
|Uncontrolled Keywords:||Erbium oxide Photoluminescence Sputtering|
|Divisions:||Div B > Photonics|
|Depositing User:||Cron job|
|Date Deposited:||04 Feb 2015 23:00|
|Last Modified:||05 Feb 2015 07:51|