CUED Publications database

Carbon nanotube growth for through silicon via application.

Xie, R and Zhang, C and van der Veen, MH and Arstila, K and Hantschel, T and Chen, B and Zhong, G and Robertson, J (2013) Carbon nanotube growth for through silicon via application. Nanotechnology, 24. 125603-.

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Abstract

Through silicon via (TSV) technology is key for next generation three-dimensional integrated circuits, and carbon nanotubes (CNT) provide a promising alternative to metal for filling the TSV. Three catalyst preparation methods for achieving CNT growth from the bottom of the TSV are investigated. Compared with sputtering and evaporation, catalyst deposition using dip-coating in a FeCl2 solution is found to be a more efficient method for realizing a bottom-up filling of the TSV (aspect ratio 5 or 10) with CNT. The CNT bundles grown in 5 min exceed the 50 μm length of the TSV and are multi-wall CNT with three to eight walls. The CNT bundles inside the TSV were electrically characterized by creating a direct contact using a four-point nanoprober setup. A low resistance of the CNT bundle of 69.7 Ω (297 Ω) was measured when the CNT bundle was contacted midway along (over the full length of) the 25 μm deep TSV. The electrical characterization in combination with the good filling of the TSV demonstrates the potential use of CNT in fully integrated TSV applications.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Div B > Solid State Electronics and Nanoscale Science
Div B > Electronic Devices & Materials
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:29
Last Modified: 08 Dec 2014 02:19
DOI: 10.1088/0957-4484/24/12/125603