Hong, WK and Inn Sohn, J and Cha, S and Min Kim, J and Park, JB and Seok Choi, S and Coles, HJ and Welland, ME (2013) Programmable ZnO nanowire transistors using switchable polarization of ferroelectric liquid crystal. Applied Physics Letters, 102. ISSN 0003-6951Full text not available from this repository.
We demonstrate modulations of electrical conductance and hysteresis behavior in ZnO nanowire transistors via electrically polarized switching of ferroelectric liquid crystal (FLC). After coating a nanowire channel in the transistors with FLCs, we observed large increases in channel conductance and hysteresis width, and a strong dependence of hysteresis loops on the polarization states associated with the orientation of electric dipole moments along the direction of the gate electric field. Furthermore, the reversible switching and retention characteristics provide the feasibility of creating a hybrid system with switch and memory functions. © 2013 American Institute of Physics.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
Div B > Photonics
|Depositing User:||Cron Job|
|Date Deposited:||18 May 2016 18:42|
|Last Modified:||30 May 2016 05:35|