Zhuo, VYQ and Jiang, Y and Li, MH and Chua, EK and Zhang, Z and Pan, JS and Zhao, R and Shi, LP and Chong, TC and Robertson, J (2013) Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering. Applied Physics Letters, 102. ISSN 0003-6951Full text not available from this repository.
Band alignment of resistive random access memory (RRAM) switching material Ta2O5 and different metal electrode materials was examined using high-resolution X-ray photoelectron spectroscopy. Schottky and hole barrier heights at the interface between electrode and Ta2O 5 were obtained, where the electrodes consist of materials with low to high work function (Φ m, v a c from 4.06 to 5.93 eV). Effective metal work functions were extracted to study the Fermi level pinning effect and to discuss the dominant conduction mechanism. An accurate band alignment between electrodes and Ta2O5 is obtained and can be used for RRAM electrode engineering and conduction mechanism study. © 2013 American Institute of Physics.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||09 Dec 2016 17:25|
|Last Modified:||21 Jan 2017 22:33|