CUED Publications database

SOI CMOS integrated zinc oxide nanowire for toluene detection

Santra, S and Guha, PK and Ray, SK and Udrea, F and Gardner, JW (2013) SOI CMOS integrated zinc oxide nanowire for toluene detection. Proceedings - Winter Simulation Conference. pp. 119-121. ISSN 0891-7736

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The paper reports on the in-situ growth of zinc oxide nanowires (ZnONWs) on a complementary metal oxide semiconductor (CMOS) substrate, and their performance as a sensing element for ppm (parts per million) levels of toluene vapour in 3000 ppm humid air. Zinc oxide NWs were grown using a low temperature (only 90°C) hydrothermal method. The ZnONWs were first characterised both electrically and through scanning electron microscopy. Then the response of the on-chip ZnONWs to different concentrations of toluene (400-2600ppm) was observed in air at 300°C. Finally, their gas sensitivity was determined and found to lie between 0.1% and 0.3% per ppm. © 2013 IEEE.

Item Type: Article
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:17
Last Modified: 22 May 2018 07:44