Santra, S and Guha, PK and Ray, SK and Udrea, F and Gardner, JW (2013) SOI CMOS integrated zinc oxide nanowire for toluene detection. Proceedings - Winter Simulation Conference. pp. 119-121. ISSN 0891-7736Full text not available from this repository.
The paper reports on the in-situ growth of zinc oxide nanowires (ZnONWs) on a complementary metal oxide semiconductor (CMOS) substrate, and their performance as a sensing element for ppm (parts per million) levels of toluene vapour in 3000 ppm humid air. Zinc oxide NWs were grown using a low temperature (only 90°C) hydrothermal method. The ZnONWs were first characterised both electrically and through scanning electron microscopy. Then the response of the on-chip ZnONWs to different concentrations of toluene (400-2600ppm) was observed in air at 300°C. Finally, their gas sensitivity was determined and found to lie between 0.1% and 0.3% per ppm. © 2013 IEEE.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||09 Dec 2016 18:08|
|Last Modified:||26 Apr 2017 23:25|