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200 V Superjunction N-Type Lateral Insulated-Gate Bipolar Transistor With Improved Latch-Up Characteristics

Tee, EKC and Antoniou, M and Udrea, F and Holke, A and Pilkington, SJ and Pal, DK and Yew, NL and Abidin, WABWZ (2013) 200 V Superjunction N-Type Lateral Insulated-Gate Bipolar Transistor With Improved Latch-Up Characteristics. IEEE Transactions on Electron Devices. ISSN 0018-9383

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 16 Jul 2015 14:03
Last Modified: 28 Aug 2015 23:15
DOI: