CUED Publications database

200 V Superjunction N-Type Lateral Insulated-Gate Bipolar Transistor With Improved Latch-Up Characteristics

Tee, EKC and Antoniou, M and Udrea, F and Holke, A and Pilkington, SJ and Pal, DK and Yew, NL and Abidin, WABWZ (2013) 200 V Superjunction N-Type Lateral Insulated-Gate Bipolar Transistor With Improved Latch-Up Characteristics. IEEE Transactions on Electron Devices. ISSN 0018-9383

Full text not available from this repository.
Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:40
Last Modified: 10 Mar 2014 16:34
DOI:

Actions (login required)

View Item