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200 v superjunction N-type lateral insulated-gate bipolar transistor with improved latch-up characteristics

Tee, EKC and Antoniou, M and Udrea, F and Holke, A and Pilkington, SJ and Pal, DK and Yew, NL and Abidin, WABWZ (2013) 200 v superjunction N-type lateral insulated-gate bipolar transistor with improved latch-up characteristics. IEEE Transactions on Electron Devices, 60. pp. 1412-1415. ISSN 0018-9383

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:16
Last Modified: 10 Mar 2014 16:34
DOI:

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