Tee, EKC and Antoniou, M and Udrea, F and Holke, A and Pilkington, SJ and Pal, DK and Yew, NL and Abidin, WABWZ (2013) 200 v superjunction N-type lateral insulated-gate bipolar transistor with improved latch-up characteristics. IEEE Transactions on Electron Devices, 60. pp. 1412-1415. ISSN 0018-9383Full text not available from this repository.
This paper evaluates the technique used to improve the latching characteristics of the 200 V n-type superjunction (SJ) lateral insulated-gate bipolar transistor (LIGBT) on a partial silicon-on-insulator. SJ IGBT devices are more prone to latch-up than standard IGBTs due to the presence of a strong pnp transistor with the p layer serving as an effective collector of holes. The initial SJ LIGBT design latches at about 23 V with a gate voltage of 5 V with a forward voltage drop (VON) of 2 V at 300 Acm2. The latch-up current density is 1100 Acm2. The latest SJ LIGBT design shows an increase in latch-up voltage close to 100 V without a significant penalty in VON. The latest design shows a latch-up current density of 1195 A cm2. The enhanced robustness against static latch-up leads to a better forward bias safe operating area. © 1963-2012 IEEE.
|Uncontrolled Keywords:||Latch-up lateral insulated-gate bipolar transistor (LIGBT) partial silicon-on-insulator (SOI) superjunction|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 12:16|
|Last Modified:||31 Jan 2015 19:02|