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Anisotropic behaviour in the magnetic field dependence of the low temperature electrical resistance of calcium-doped lanthanum manganate thin films grown by RF magnetron sputtering

Vertruyen, B and Dusoulier, L and Fagnard, J-F and Vanderbemden, P and Vanhoyland, G and Ausloos, M and Delwiche, J and Rulmont, A and Cloots, R (2004) Anisotropic behaviour in the magnetic field dependence of the low temperature electrical resistance of calcium-doped lanthanum manganate thin films grown by RF magnetron sputtering. Journal of Magnetism and Magnetic Materials, 280. pp. 264-272. ISSN 0304-8853

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Abstract

We report about the magnetoresistive properties of calcium-doped lanthanum manganate thin films grown by RF magnetron sputtering on single crystalline LaAlO3 and MgO substrates. Two orientations of the magnetic field with respect to the electrical current have been studied: (i) magnetic field in the plane of the film and parallel to the electrical current, and (ii) magnetic field perpendicular to the plane of the film. The film grown on LaAlO 3 is characterised by an unusual magnetoresistive behaviour when the magnetic field is applied perpendicular to the film plane: the appearance of two bumps in the field dependence of the resistance is shown to be related to the occurrence of anisotropic magnetoresistive effects in manganate films. © 2004 Elsevier B.V. All rights reserved.

Item Type: Article
Uncontrolled Keywords: Anisotropic magnetoresistance Colossal magnetoresistance Manganates Perovskite
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:28
Last Modified: 08 Dec 2014 02:23
DOI: 10.1016/j.jmmm.2004.03.022