Robertson, J (1985) Theory of defects in amorphous semiconductors. Journal of Non-Crystalline Solids, 77-78. pp. 37-46. ISSN 0022-3093Full text not available from this repository.
We review the electronic structure of defects in aSi:H, aGaAs and aSi3N4, emphasising in aSi:H the doping mechanism, the evidence that its dangling bond defect has a small electron-lattice coupling and a positive correlation energy, and possible atomic mechanisms for the Staebler-Wronski effect. © 1985.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||15 Dec 2015 13:21|
|Last Modified:||30 Apr 2016 23:04|