CUED Publications database

Theory of defects in amorphous semiconductors

Robertson, J (1985) Theory of defects in amorphous semiconductors. Journal of Non-Crystalline Solids, 77-78. pp. 37-46. ISSN 0022-3093

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We review the electronic structure of defects in aSi:H, aGaAs and aSi3N4, emphasising in aSi:H the doping mechanism, the evidence that its dangling bond defect has a small electron-lattice coupling and a positive correlation energy, and possible atomic mechanisms for the Staebler-Wronski effect. © 1985.

Item Type: Article
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 18 May 2016 18:14
Last Modified: 26 May 2016 23:24
DOI: 10.1016/0022-3093(85)90605-2