CUED Publications database

Theory of defects in amorphous semiconductors

Robertson, J (1985) Theory of defects in amorphous semiconductors. Journal of Non-Crystalline Solids, 77-78. pp. 37-46. ISSN 0022-3093

Full text not available from this repository.


We review the electronic structure of defects in aSi:H, aGaAs and aSi 3 N 4 , emphasising in aSi:H the doping mechanism, the evidence that its dangling bond defect has a small electron-lattice coupling and a positive correlation energy, and possible atomic mechanisms for the Staebler-Wronski effect. © 1985.

Item Type: Article
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:13
Last Modified: 23 Nov 2017 04:13