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Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

Kiani, A and Hasko, DG and Milne, WI and Flewitt, AJ (2013) Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model. Applied Physics Letters, 102. ISSN 0003-6951

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:28
Last Modified: 30 Sep 2014 19:14
DOI:

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