Lee, S and Jeon, S and Robertson, J and Nathan, A (2012) How to achieve ultra high photoconductive gain for transparent oxide semiconductor image sensors. Technical Digest - International Electron Devices Meeting, IEDM. 24.3.1-24.3.4. ISSN 0163-1918Full text not available from this repository.
We present quantitative analysis of the ultra-high photoconductivity in amorphous oxide semiconductor (AOS) thin film transistors (TFTs), taking into account the sub-gap optical absorption in oxygen deficiency defects. We analyze the basis of photoconductivity in AOSs, explained in terms of the extended electron lifetime due to retarded recombination as a result of hole localization. Also, photoconductive gain in AOS photo-TFTs can be maximized by reducing the transit time associated with short channel lengths, making device scaling favourable for high sensitivity operation. © 2012 IEEE.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
Div B > Solid State Electronics and Nanoscale Science
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||18 May 2016 18:24|
|Last Modified:||30 Aug 2016 22:38|