CUED Publications database

How to achieve ultra high photoconductive gain for transparent oxide semiconductor image sensors

Lee, S and Jeon, S and Robertson, J and Nathan, A (2012) How to achieve ultra high photoconductive gain for transparent oxide semiconductor image sensors. Technical Digest - International Electron Devices Meeting, IEDM. 24.3.1-24.3.4. ISSN 0163-1918

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Abstract

We present quantitative analysis of the ultra-high photoconductivity in amorphous oxide semiconductor (AOS) thin film transistors (TFTs), taking into account the sub-gap optical absorption in oxygen deficiency defects. We analyze the basis of photoconductivity in AOSs, explained in terms of the extended electron lifetime due to retarded recombination as a result of hole localization. Also, photoconductive gain in AOS photo-TFTs can be maximized by reducing the transit time associated with short channel lengths, making device scaling favourable for high sensitivity operation. © 2012 IEEE.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:46
Last Modified: 08 Dec 2014 02:19
DOI: 10.1109/IEDM.2012.6479094