CUED Publications database

Chemical trends of defects at HfO2:GaAs and Al2O3:GaAs/InAs/InP/GaSb interfaces

Lin, L and Guo, Y and Gillen, R and Robertson, J (2013) Chemical trends of defects at HfO2:GaAs and Al2O3:GaAs/InAs/InP/GaSb interfaces. JOURNAL OF APPLIED PHYSICS, 113. ISSN 0021-8979

Full text not available from this repository.
Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Photonics
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:41
Last Modified: 08 Dec 2014 02:11
DOI: 10.1063/1.4799364