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Chemical trends of defects at HfO2:GaAs and Al2O3:GaAs/InAs/InP/GaSb interfaces

Lin, L and Guo, Y and Gillen, R and Robertson, J (2013) Chemical trends of defects at HfO2:GaAs and Al2O3:GaAs/InAs/InP/GaSb interfaces. JOURNAL OF APPLIED PHYSICS, 113. ISSN 0021-8979

Full text not available from this repository.
Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Photonics
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 16 Jul 2015 13:35
Last Modified: 29 Aug 2015 21:49
DOI: 10.1063/1.4799364