CUED Publications database

Chemical trends of defects at HfO2:GaAs and Al2O3:GaAs/InAs/InP/GaSb interfaces

Lin, L and Guo, Y and Gillen, R and Robertson, J (2013) Chemical trends of defects at HfO2:GaAs and Al2O3:GaAs/InAs/InP/GaSb interfaces. JOURNAL OF APPLIED PHYSICS, 113. ISSN 0021-8979

Full text not available from this repository.
Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Div B > Photonics
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 09 Dec 2016 17:25
Last Modified: 29 Jun 2017 03:22
DOI: