Lin, L and Guo, Y and Gillen, R and Robertson, J (2013) Chemical trends of defects at HfO2:GaAs and Al2O3:GaAs/InAs/InP/GaSb interfaces. JOURNAL OF APPLIED PHYSICS, 113. ISSN 0021-8979Full text not available from this repository.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
Div B > Photonics
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||18 May 2016 18:10|
|Last Modified:||24 Aug 2016 22:12|