CUED Publications database

Modeling bipolar power semiconductor devices gachovska

Gachovska, TK and Hudgins, JL and Santi, E and Bryant, A and Palmer, PR (2013) Modeling bipolar power semiconductor devices gachovska. Synthesis Lectures on Power Electronics, 5. pp. 1-95. ISSN 1931-9525

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Abstract

This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models. Table of Contents: Introduction to Power Semiconductor Device Modeling/Physics of Power Semiconductor Devices/Modeling of a Power Diode and IGBT/IGBT Under an Inductive Load-Switching Condition in Simulink/Parameter Extraction. © 2013 by Morgan & Claypool.

Item Type: Article
Uncontrolled Keywords: carrier diffusion drift region Fourier series solution physics-based model power semiconductor devices transient switching behavior
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:08
Last Modified: 08 Dec 2014 02:19
DOI: 10.2200/S00483ED1V01Y201302PEL005