Kim, Y and Poumirol, JM and Lombardo, A and Kalugin, NG and Georgiou, T and Kim, YJ and Novoselov, KS and Ferrari, AC and Kono, J and Kashuba, O and Fal'Ko, VI and Smirnov, D (2013) Measurement of filling-factor-dependent magnetophonon resonances in graphene using Raman spectroscopy. Physical Review Letters, 110. ISSN 0031-9007Full text not available from this repository.
We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45 T. This reveals a filling-factor-dependent, multicomponent anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E2g phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudomagnetic fields lead to increased scattering intensity inside the anticrossing gap, consistent with the experiments. © 2013 American Physical Society.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 11:28|
|Last Modified:||08 Dec 2014 02:18|