CUED Publications database

Raman scattering efficiency of graphene

Klar, P and Lidorikis, E and Eckmann, A and Verzhbitskiy, IA and Ferrari, AC and Casiraghi, C (2013) Raman scattering efficiency of graphene. Physical Review B - Condensed Matter and Materials Physics, 87. ISSN 1098-0121

Full text not available from this repository.

Abstract

We determine the Raman scattering efficiency of the G and 2D peaks in graphene. Three substrates are used: silicon covered with 300 or 90 nm oxide, and calcium fluoride (CaF 2 ). On Si/SiO x , the areas of the G and 2D peak show a strong dependence on the substrate due to interference effects, while on CaF 2 no significant dependence is detected. Unintentional doping is reduced by placing graphene on CaF 2 . We determine the Raman scattering efficiency by comparison with the 322 cm - 1 peak area of CaF 2 . At 2.41 eV, the Raman efficiency of the G peak is ∼200×10 - 5 m - 1Sr - 1, and changes with the excitation energy to the power of 4. The 2D Raman efficiency is at least one order of magnitude higher than that of the G peak, with a different excitation energy dependence. © 2013 American Physical Society.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:14
Last Modified: 10 Aug 2017 01:36
DOI: