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Carrier lifetime and mobility enhancement in nearly defect-free core-shell nanowires measured using time-resolved terahertz spectroscopy.

Parkinson, P and Joyce, HJ and Gao, Q and Tan, HH and Zhang, X and Zou, J and Jagadish, C and Herz, LM and Johnston, MB (2009) Carrier lifetime and mobility enhancement in nearly defect-free core-shell nanowires measured using time-resolved terahertz spectroscopy. Nano Lett, 9. pp. 3349-3353.

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Abstract

We have used transient terahertz photoconductivity measurements to assess the efficacy of two-temperature growth and core-shell encapsulation techniques on the electronic properties of GaAs nanowires. We demonstrate that two-temperature growth of the GaAs core leads to an almost doubling in charge-carrier mobility and a tripling of carrier lifetime. In addition, overcoating the GaAs core with a larger-bandgap material is shown to reduce the density of surface traps by 82%, thereby enhancing the charge conductivity.

Item Type: Article
Uncontrolled Keywords: Arsenicals Electric Conductivity Gallium Materials Testing Nanotechnology Nanowires Particle Size Photochemistry Surface Properties Temperature Terahertz Spectroscopy Time Factors
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:25
Last Modified: 13 Oct 2014 01:13
DOI: 10.1021/nl9016336

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