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Full text not available from this repository.Abstract
We have used transient terahertz photoconductivity measurements to assess the efficacy of two-temperature growth and core-shell encapsulation techniques on the electronic properties of GaAs nanowires. We demonstrate that two-temperature growth of the GaAs core leads to an almost doubling in charge-carrier mobility and a tripling of carrier lifetime. In addition, overcoating the GaAs core with a larger-bandgap material is shown to reduce the density of surface traps by 82%, thereby enhancing the charge conductivity.
Item Type: | Article |
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Uncontrolled Keywords: | Arsenicals Electric Conductivity Gallium Materials Testing Nanotechnology Nanowires Particle Size Photochemistry Surface Properties Temperature Terahertz Spectroscopy Time Factors |
Subjects: | UNSPECIFIED |
Divisions: | Div B > Solid State Electronics and Nanoscale Science |
Depositing User: | Cron Job |
Date Deposited: | 17 Jul 2017 19:15 |
Last Modified: | 20 Apr 2018 20:20 |
DOI: |