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Full text not available from this repository.Abstract
We have used transient terahertz photoconductivity measurements to assess the efficacy of two-temperature growth and core-shell encapsulation techniques on the electronic properties of GaAs nanowires. We demonstrate that two-temperature growth of the GaAs core leads to an almost doubling in charge-carrier mobility and a tripling of carrier lifetime. In addition, overcoating the GaAs core with a larger-bandgap material is shown to reduce the density of surface traps by 82%, thereby enhancing the charge conductivity.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Arsenicals Electric Conductivity Gallium Materials Testing Nanotechnology Nanowires Particle Size Photochemistry Surface Properties Temperature Terahertz Spectroscopy Time Factors |
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Electronics, Power & Energy Conversion Div B > Solid State Electronics and Nanoscale Science |
| Depositing User: | Cron Job |
| Date Deposited: | 07 Mar 2014 11:25 |
| Last Modified: | 28 Jul 2014 01:08 |
| DOI: | 10.1021/nl9016336 |
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