Parkinson, P and Joyce, HJ and Gao, Q and Tan, HH and Zhang, X and Zou, J and Jagadish, C and Herz, LM and Johnston, MB (2009) Carrier lifetime and mobility enhancement in nearly defect-free core-shell nanowires measured using time-resolved terahertz spectroscopy. Nano Lett, 9. pp. 3349-3353.Full text not available from this repository.
We have used transient terahertz photoconductivity measurements to assess the efficacy of two-temperature growth and core-shell encapsulation techniques on the electronic properties of GaAs nanowires. We demonstrate that two-temperature growth of the GaAs core leads to an almost doubling in charge-carrier mobility and a tripling of carrier lifetime. In addition, overcoating the GaAs core with a larger-bandgap material is shown to reduce the density of surface traps by 82%, thereby enhancing the charge conductivity.
|Uncontrolled Keywords:||Arsenicals Electric Conductivity Gallium Materials Testing Nanotechnology Nanowires Particle Size Photochemistry Surface Properties Temperature Terahertz Spectroscopy Time Factors|
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||15 Dec 2015 12:55|
|Last Modified:||13 Feb 2016 03:06|