Parkinson, P and Dodson, C and Joyce, HJ and Bertness, KA and Sanford, NA and Herz, LM and Johnston, MB (2012) Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires. Nano Letters, 12. pp. 4600-4604. ISSN 1530-6984Full text not available from this repository.
The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ± 120 cm 2/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth. © 2012 American Chemical Society.
|Uncontrolled Keywords:||GaN nanowire photoconductivity surface plasmon terahertz|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
Div B > Solid State Electronics and Nanoscale Science
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 11:46|
|Last Modified:||16 Dec 2014 19:07|