CUED Publications database

Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires

Parkinson, P and Dodson, C and Joyce, HJ and Bertness, KA and Sanford, NA and Herz, LM and Johnston, MB (2012) Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires. Nano Letters, 12. pp. 4600-4604. ISSN 1530-6984

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Abstract

The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ± 120 cm 2/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth. © 2012 American Chemical Society.

Item Type: Article
Uncontrolled Keywords: GaN nanowire photoconductivity surface plasmon terahertz
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:46
Last Modified: 16 Dec 2014 19:07
DOI: 10.1021/nl301898m