Kim, JH and Moon, SR and Kim, Y and Chen, ZG and Zou, J and Choi, DY and Joyce, HJ and Gao, Q and Tan, HH and Jagadish, C (2012) Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process. Nanotechnology, 23. ISSN 0957-4484Full text not available from this repository.
We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of 111 segments were formed by employing a reactant gas purging process. Unlike non-epitaxial kinked nanowires, a two-temperature process is necessary to maintain the taper-free nature of segments in our kinked germanium nanowires on silicon. As an application, nanobridges formed between (111) side walls of V-grooved (100) silicon substrates have been demonstrated. © 2012 IOP Publishing Ltd.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||15 Dec 2015 12:59|
|Last Modified:||06 May 2016 00:54|