Kim, JH and Moon, SR and Kim, Y and Chen, ZG and Zou, J and Choi, DY and Joyce, HJ and Gao, Q and Tan, HH and Jagadish, C (2012) Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process. Nanotechnology, 23. ISSN 0957-4484Full text not available from this repository.
We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of 111 segments were formed by employing a reactant gas purging process. Unlike non-epitaxial kinked nanowires, a two-temperature process is necessary to maintain the taper-free nature of segments in our kinked germanium nanowires on silicon. As an application, nanobridges formed between (111) side walls of V-grooved (100) silicon substrates have been demonstrated. © 2012 IOP Publishing Ltd.
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|Date Deposited:||16 Jul 2015 13:11|
|Last Modified:||03 Aug 2015 07:04|