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Taper-free and vertically oriented Ge nanowires on Ge/Si substrates grown by a two-temperature process

Kim, JH and Moon, SR and Yoon, HS and Jung, JH and Kim, Y and Chen, ZG and Zou, J and Choi, DY and Joyce, HJ and Gao, Q and Tan, HH and Jagadish, C (2012) Taper-free and vertically oriented Ge nanowires on Ge/Si substrates grown by a two-temperature process. Crystal Growth and Design, 12. pp. 135-141. ISSN 1528-7483

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:25
Last Modified: 02 Jun 2014 01:13
DOI:

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