Kang, J-H and Gao, Q and Joyce, HJ and Tan, HH and Jagadish, C and Kim, Y and Guo, Y and Xu, H and Zou, J and Fickenscher, MA and Smith, LM and Jackson, HE and Yarrison-Rice, JM (2011) Defect-free GaAs/AlGaAs Core-shell nanowires on Si substrates. Crystal Growth and Design, 11. pp. 3109-3114. ISSN 1528-7483Full text not available from this repository.
We report straight and vertically aligned defect-free GaAs nanowires grown on Si(111) substrates by metal-organic chemical vapor deposition. By deposition of thin GaAs buffer layers on Si substrates, these nanowires could be grown on the buffer layers with much less stringent conditions as otherwise imposed by epitaxy of III-V compounds on Si. Also, crystal-defect-free GaAs nanowires were grown by using either a two-temperature growth mode consisting of a short initial nucleation step under higher temperature followed by subsequent growth under lower temperature or a rapid growth rate mode with high source flow rate. These two growth modes not only eliminated planar crystallographic defects but also significantly reduced tapering. Core-shell GaAs-AlGaAs nanowires grown by the two-temperature growth mode showed improved optical properties with strong photoluminescence and long carrier life times. © 2011 American Chemical Society.
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