Joyce, HJ and Gao, Q and Wong-Leung, J and Kim, Y and Tan, HH and Jagadish, C (2011) Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications. IEEE Journal on Selected Topics in Quantum Electronics, 17. pp. 766-778. ISSN 1077-260XFull text not available from this repository.
GaAs, InAs, and InGaAs nanowires each exhibit significant potential to drive new applications in electronic and optoelectronic devices. Nevertheless, the development of these devices depends on our ability to fabricate these nanowires with tight control over critical properties, such as nanowire morphology, orientation, crystal structure, and chemical composition. Although GaAs and InAs are related material systems, GaAs and InAs nanowires exhibit very different growth behaviors. An understanding of these growth behaviors is imperative if high-quality ternary InGaAs nanowires are to be realized. This report examines GaAs, InAs, and InGaAs nanowires, and how their growth may be tailored to achieve desirable material properties. GaAs and InAs nanowire growth are compared, with a view toward the growth of high-quality InGaAs nanowires with device-accessible properties. © 2011 IEEE.
|Uncontrolled Keywords:||electron microscopy III-V nanowires semiconductor nanowires|
|Depositing User:||Cron job|
|Date Deposited:||04 Feb 2015 22:47|
|Last Modified:||05 Feb 2015 01:02|