CUED Publications database

Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications

Joyce, HJ and Gao, Q and Wong-Leung, J and Kim, Y and Tan, HH and Jagadish, C (2011) Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications. IEEE Journal on Selected Topics in Quantum Electronics, 17. pp. 766-778. ISSN 1077-260X

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Abstract

GaAs, InAs, and InGaAs nanowires each exhibit significant potential to drive new applications in electronic and optoelectronic devices. Nevertheless, the development of these devices depends on our ability to fabricate these nanowires with tight control over critical properties, such as nanowire morphology, orientation, crystal structure, and chemical composition. Although GaAs and InAs are related material systems, GaAs and InAs nanowires exhibit very different growth behaviors. An understanding of these growth behaviors is imperative if high-quality ternary InGaAs nanowires are to be realized. This report examines GaAs, InAs, and InGaAs nanowires, and how their growth may be tailored to achieve desirable material properties. GaAs and InAs nanowire growth are compared, with a view toward the growth of high-quality InGaAs nanowires with device-accessible properties. © 2011 IEEE.

Item Type: Article
Uncontrolled Keywords: electron microscopy III-V nanowires semiconductor nanowires
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:25
Last Modified: 08 Dec 2014 02:18
DOI: 10.1109/JSTQE.2010.2077621