Kang, J-H and Gao, Q and Joyce, HJ and Kim, Y and Guo, Y and Xu, H and Zou, J and Fickenscher, MA and Smith, LM and Jackson, HE and Yarrison-Rice, JM and Tan, HH and Jagadish, C (2010) Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD. pp. 57-58.Full text not available from this repository.
GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires with a shell thickness of 25 nm, showed a significant shift in emission energy of 260 meV from the unstrained GaAs nanowires. © 2010 IEEE.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
Div B > Solid State Electronics and Nanoscale Science
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 12:08|
|Last Modified:||08 Dec 2014 02:18|