CUED Publications database

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

Ullah, AR and Joyce, HJ and Burke, AM and Tan, HH and Jagadish, C and Micolich, AP Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors. (Unpublished)

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Abstract

We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires with nominally identical diameter. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors.

Item Type: Article
Uncontrolled Keywords: cond-mat.mes-hall cond-mat.mes-hall
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 02 Aug 2017 20:13
Last Modified: 08 Aug 2017 01:51
DOI: