Guo, YN and Xu, HY and Auchterlonie, GJ and Burgess, T and Joyce, HJ and Gao, Q and Tan, HH and Jagadish, C and Shu, HB and Chen, XS and Lu, W and Kim, Y and Zou, J (2013) Phase separation induced by Au catalysts in ternary InGaAs nanowires. Nano Lett, 13. pp. 643-650.Full text not available from this repository.
We report a novel phase separation phenomenon observed in the growth of ternary In(x)Ga(1-x)As nanowires by metalorganic chemical vapor deposition. A spontaneous formation of core-shell nanowires is investigated by cross-sectional transmission electron microscopy, revealing the compositional complexity within the ternary nanowires. It has been found that for In(x)Ga(1-x)As nanowires high precursor flow rates generate ternary In(x)Ga(1-x)As cores with In-rich shells, while low precursor flow rates produce binary GaAs cores with ternary In(x)Ga(1-x)As shells. First-principle calculations combined with thermodynamic considerations suggest that this phenomenon is due to competitive alloying of different group-III elements with Au catalysts, and variations in elemental concentrations of group-III materials in the catalyst under different precursor flow rates. This study shows that precursor flow rates are critical factors for manipulating Au catalysts to produce nanowires of desired composition.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Unnamed user with email email@example.com|
|Date Deposited:||18 May 2016 18:05|
|Last Modified:||30 May 2016 03:49|