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Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers.

Jung, JH and Yoon, HS and Kim, YL and Song, MS and Kim, Y and Chen, ZG and Zou, J and Choi, DY and Kang, JH and Joyce, HJ and Gao, Q and Hoe Tan, H and Jagadish, C (2010) Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers. Nanotechnology, 21. 295602-.

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Abstract

We demonstrate a method to realize vertically oriented Ge nanowires on Si(111) substrates. Ge nanowires were grown by chemical vapor deposition using Au nanoparticles to seed nanowire growth via a vapor-liquid-solid growth mechanism. Rapid oxidation of Si during Au nanoparticle application inhibits the growth of vertically oriented Ge nanowires directly on Si. The present method employs thin Ge buffer layers grown at low temperature less than 600 degrees C to circumvent the oxidation problem. By using a thin Ge buffer layer with root-mean-square roughness of approximately 2 nm, the yield of vertically oriented Ge nanowires is as high as 96.3%. This yield is comparable to that of homoepitaxial Ge nanowires. Furthermore, branched Ge nanowires could be successfully grown on these vertically oriented Ge nanowires by a secondary seeding technique. Since the buffer layers are grown under moderate conditions without any high temperature processing steps, this method has a wide process window highly suitable for Si-based microelectronics.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:46
Last Modified: 13 Oct 2014 01:13
DOI: 10.1088/0957-4484/21/29/295602

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