Kang, JH and Gao, Q and Joyce, HJ and Tan, HH and Jagadish, C and Kim, Y and Choi, DY and Guo, Y and Xu, H and Zou, J and Fickenscher, MA and Smith, LM and Jackson, HE and Yarrison-Rice, JM (2010) Novel growth and properties of GaAs nanowires on Si substrates. Nanotechnology, 21. 035604-.Full text not available from this repository.
Straight, vertically aligned GaAs nanowires were grown on Si(111) substrates coated with thin GaAs buffer layers. We find that the V/III precursor ratio and growth temperature are crucial factors influencing the morphology and quality of buffer layers. A double layer structure, consisting of a thin initial layer grown at low V/III ratio and low temperature followed by a layer grown at high V/III ratio and high temperature, is crucial for achieving straight, vertically aligned GaAs nanowires on Si(111) substrates. An in situ annealing step at high temperature after buffer layer growth improves the surface and structural properties of the buffer layer, which further improves the morphology of the GaAs nanowire growth. Through such optimizations we show that vertically aligned GaAs nanowires can be fabricated on Si(111) substrates and achieve the same structural and optical properties as GaAs nanowires grown directly on GaAs(111)B substrates.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
Div B > Solid State Electronics and Nanoscale Science
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 11:46|
|Last Modified:||11 Aug 2014 01:11|
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