Paladugu, M and Zou, J and Guo, YN and Zhang, X and Joyce, HJ and Gao, Q and Tan, HH and Jagadish, C and Kim, Y (2009) Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores. Nanoscale Res Lett, 4. pp. 846-849. ISSN 1931-7573Full text not available from this repository.
GaAs was radially deposited on InAs nanowires by metal-organic chemical vapor deposition and resultant nanowire heterostructures were characterized by detailed electron microscopy investigations. The GaAs shells have been grown in wurtzite structure, epitaxially on the wurtzite structured InAs nanowire cores. The fundamental reason of structural evolution in terms of material nucleation and interfacial structure is given.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
Div B > Solid State Electronics and Nanoscale Science
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 11:28|
|Last Modified:||21 Jul 2014 01:01|
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