Song, MS and Jung, JH and Kim, Y and Wang, Y and Zou, J and Joyce, HJ and Gao, Q and Tan, HH and Jagadish, C (2008) Vertically standing Ge nanowires on GaAs(110) substrates. Nanotechnology, 19. 125602-. ISSN 0957-4484Full text not available from this repository.
The growth of epitaxial Ge nanowires is investigated on (100), (111) B and (110) GaAs substrates in the growth temperature range from 300 to 380 °C. Unlike epitaxial Ge nanowires on Ge or Si substrates, Ge nanowires on GaAs substrates grow predominantly along the [Formula: see text] direction. Using this unique property, vertical [Formula: see text] Ge nanowires epitaxially grown on GaAs(110) surface are realized. In addition, these Ge nanowires exhibit minimal tapering and uniform diameters, regardless of growth temperatures, which is an advantageous property for device applications. Ge nanowires growing along the [Formula: see text] directions are particularly attractive candidates for forming nanobridge devices on conventional (100) surfaces.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||12 Jul 2013 15:10|
|Last Modified:||14 Oct 2013 01:13|
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