Joyce, HJ and Gao, Q and Tan, HH and Jagadish, C and Kim, Y and Zhang, X and Guo, Y and Zou, J (2007) Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process. Nano Lett, 7. pp. 921-926. ISSN 1530-6984Full text not available from this repository.
We demonstrate vertically aligned epitaxial GaAs nanowires of excellent crystallographic quality and optimal shape, grown by Au nanoparticle-catalyzed metalorganic chemical vapor deposition. This is achieved by a two-temperature growth procedure, consisting of a brief initial high-temperature growth step followed by prolonged growth at a lower temperature. The initial high-temperature step is essential for obtaining straight, vertically aligned epitaxial nanowires on the (111)B GaAs substrate. The lower temperature employed for subsequent growth imparts superior nanowire morphology and crystallographic quality by minimizing radial growth and eliminating twinning defects. Photoluminescence measurements confirm the excellent optical quality of these two-temperature grown nanowires. Two mechanisms are proposed to explain the success of this two-temperature growth process, one involving Au nanoparticle-GaAs interface conditions and the other involving melting-solidification temperature hysteresis of the Au-Ga nanoparticle alloy.
|Uncontrolled Keywords:||Arsenicals Crystallization Electric Wiring Gallium Macromolecular Substances Materials Testing Molecular Conformation Nanotechnology Nanotubes Particle Size Semiconductors Surface Properties Temperature|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||12 Jul 2013 15:10|
|Last Modified:||14 Oct 2013 01:13|
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