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Dynamics of strongly degenerate electron-hole plasmas and excitons in single InP nanowires.

Titova, LV and Hoang, TB and Yarrison-Rice, JM and Jackson, HE and Kim, Y and Joyce, HJ and Gao, Q and Tan, HH and Jagadish, C and Zhang, X and Zou, J and Smith, LM (2007) Dynamics of strongly degenerate electron-hole plasmas and excitons in single InP nanowires. Nano Lett, 7. pp. 3383-3387. ISSN 1530-6984

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Abstract

Low-temperature time-resolved photoluminescence spectroscopy is used to probe the dynamics of photoexcited carriers in single InP nanowires. At early times after pulsed excitation, the photoluminescence line shape displays a characteristic broadening, consistent with emission from a degenerate, high-density electron-hole plasma. As the electron-hole plasma cools and the carrier density decreases, the emission rapidly converges toward a relatively narrow band consistent with free exciton emission from the InP nanowire. The free excitons in these single InP nanowires exhibit recombination lifetimes closely approaching that measured in a high-quality epilayer, suggesting that in these InP nanowires, electrons and holes are relatively insensitive to surface states. This results in higher quantum efficiencies than other single-nanowire systems as well as significant state-filling and band gap renormalization, which is observed at high electron-hole carrier densities.

Item Type: Article
Uncontrolled Keywords: Electrons Indium Light Metal Nanoparticles Microscopy, Electron, Transmission Nanotechnology Phosphines Semiconductors Silicon Time Factors
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:28
Last Modified: 13 Oct 2014 01:13
DOI: 10.1021/nl071733l

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