Titova, LV and Hoang, TB and Yarrison-Rice, JM and Jackson, HE and Kim, Y and Joyce, HJ and Gao, Q and Tan, HH and Jagadish, C and Zhang, X and Zou, J and Smith, LM (2007) Dynamics of strongly degenerate electron-hole plasmas and excitons in single InP nanowires. Nano Lett, 7. pp. 3383-3387. ISSN 1530-6984Full text not available from this repository.
Low-temperature time-resolved photoluminescence spectroscopy is used to probe the dynamics of photoexcited carriers in single InP nanowires. At early times after pulsed excitation, the photoluminescence line shape displays a characteristic broadening, consistent with emission from a degenerate, high-density electron-hole plasma. As the electron-hole plasma cools and the carrier density decreases, the emission rapidly converges toward a relatively narrow band consistent with free exciton emission from the InP nanowire. The free excitons in these single InP nanowires exhibit recombination lifetimes closely approaching that measured in a high-quality epilayer, suggesting that in these InP nanowires, electrons and holes are relatively insensitive to surface states. This results in higher quantum efficiencies than other single-nanowire systems as well as significant state-filling and band gap renormalization, which is observed at high electron-hole carrier densities.
|Uncontrolled Keywords:||Electrons Indium Light Metal Nanoparticles Microscopy, Electron, Transmission Nanotechnology Phosphines Semiconductors Silicon Time Factors|
|Depositing User:||Cron job|
|Date Deposited:||04 Feb 2015 22:39|
|Last Modified:||05 Feb 2015 00:53|