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Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires.

Kim, Y and Joyce, HJ and Gao, Q and Tan, HH and Jagadish, C and Paladugu, M and Zou, J and Suvorova, AA (2006) Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires. Nano Lett, 6. pp. 599-604. ISSN 1530-6984

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Abstract

We have synthesized ternary InGaAs nanowires on (111)B GaAs surfaces by metal-organic chemical vapor deposition. Au colloidal nanoparticles were employed to catalyze nanowire growth. We observed the strong influence of nanowire density on nanowire height, tapering, and base shape specific to the nanowires with high In composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Energy dispersive X-ray spectroscopy analysis together with high-resolution electron microscopy study of individual InGaAs nanowires shows large In/Ga compositional variation along the nanowire supporting the present diffusion model. Photoluminescence spectra exhibit a red shift with decreasing nanowire density due to the higher degree of In incorporation in more sparsely distributed InGaAs nanowires.

Item Type: Article
Uncontrolled Keywords: Arsenicals Crystallization Gallium Indium Light Luminescent Measurements Materials Testing Molecular Conformation Nanotubes Optics and Photonics Particle Size
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:25
Last Modified: 02 Jun 2014 01:13
DOI: 10.1021/nl052189o

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