Kim, Y and Joyce, HJ and Gao, Q and Tan, HH and Jagadish, C and Paladugu, M and Zou, J and Suvorova, AA (2006) Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires. Nano Lett, 6. pp. 599-604. ISSN 1530-6984Full text not available from this repository.
We have synthesized ternary InGaAs nanowires on (111)B GaAs surfaces by metal-organic chemical vapor deposition. Au colloidal nanoparticles were employed to catalyze nanowire growth. We observed the strong influence of nanowire density on nanowire height, tapering, and base shape specific to the nanowires with high In composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Energy dispersive X-ray spectroscopy analysis together with high-resolution electron microscopy study of individual InGaAs nanowires shows large In/Ga compositional variation along the nanowire supporting the present diffusion model. Photoluminescence spectra exhibit a red shift with decreasing nanowire density due to the higher degree of In incorporation in more sparsely distributed InGaAs nanowires.
|Uncontrolled Keywords:||Arsenicals Crystallization Gallium Indium Light Luminescent Measurements Materials Testing Molecular Conformation Nanotubes Optics and Photonics Particle Size|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
Div B > Solid State Electronics and Nanoscale Science
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 11:25|
|Last Modified:||08 Dec 2014 02:22|