Gao, Q and Joyce, HJ and Paiman, S and Kang, JH and Tan, HH and Kim, Y and Smith, LM and Jackson, HE and Yarrison-Rice, JM and Zou, J and Jagadish, C (2011) III-V compound semiconductor nanowires for optoelectronic device applications. International Journal of High Speed Electronics and Systems, 20. pp. 131-141. ISSN 0129-1564Full text not available from this repository.
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (111)B and InP (111)B substrates, respectively, by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters on the crystal structure and optical properties of various nanowires were studied in detail. We have successfully obtained defect-free GaAs nanowires with nearly intrinsic exciton lifetime and vertical straight nanowires on Si (111)B substrates. The crystal structure of InP nanowires, i.e., WZ or ZB, can also be engineered by carefully controlling the V/III ratio and catalyst size. © 2011 World Scientific Publishing Company.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||15 Dec 2015 13:19|
|Last Modified:||02 May 2016 04:11|