Williams, M and Burke, AM and Joyce, HJ and Micolich, AP and Tan, HH and Jagadish, C (2010) A comparative study of transistors based on wurtzite and zincblende InAs nanowires. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD. pp. 203-204.Full text not available from this repository.
We report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. We find much higher current densities in the ZB NW-FETs, and on/off ratios of up to 100. © 2010 IEEE.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||15 Dec 2015 13:33|
|Last Modified:||13 Feb 2016 03:35|