Williams, M and Burke, AM and Joyce, HJ and Micolich, AP and Tan, HH and Jagadish, C (2010) A comparative study of transistors based on wurtzite and zincblende InAs nanowires. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD. pp. 203-204.Full text not available from this repository.
We report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. We find much higher current densities in the ZB NW-FETs, and on/off ratios of up to 100. © 2010 IEEE.
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|Date Deposited:||04 Feb 2015 22:58|
|Last Modified:||05 Feb 2015 01:15|