CUED Publications database

A comparative study of transistors based on wurtzite and zincblende InAs nanowires

Williams, M and Burke, AM and Joyce, HJ and Micolich, AP and Tan, HH and Jagadish, C (2010) A comparative study of transistors based on wurtzite and zincblende InAs nanowires. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD. pp. 203-204.

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Abstract

We report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. We find much higher current densities in the ZB NW-FETs, and on/off ratios of up to 100. © 2010 IEEE.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:08
Last Modified: 08 Dec 2014 02:18
DOI: 10.1109/COMMAD.2010.5699740