Williams, M and Burke, AM and Joyce, HJ and Micolich, AP and Tan, HH and Jagadish, C (2010) A comparative study of transistors based on wurtzite and zincblende InAs nanowires. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD. pp. 203-204.
Full text not available from this repository.Abstract
We report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. We find much higher current densities in the ZB NW-FETs, and on/off ratios of up to 100. © 2010 IEEE.
| Item Type: | Article |
|---|---|
| Subjects: | UNSPECIFIED |
| Divisions: | UNSPECIFIED |
| Depositing User: | Cron job |
| Date Deposited: | 04 Feb 2015 22:58 |
| Last Modified: | 05 Feb 2015 01:15 |
| DOI: | 10.1109/COMMAD.2010.5699740 |
