Kang, J-H and Gao, Q and Joyce, HJ and Tan, HH and Jagadish, C and Kim, Y and Guo, Y and Xu, H and Zou, J and Fickenscher, MA and Smith, LM and Jackson, HE and Yarrison-Rice, JM (2010) Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates. 2010 10th IEEE Conference on Nanotechnology, NANO 2010. pp. 470-473.Full text not available from this repository.
We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-liquid-solid (VLS) growth mechanism with Au catalysts by metal-organic chemical vapor deposition (MOCVD). By using annealed thin GaAs buffer layers on the surface of Si substrates, most nanowires are grown on the substrates straight, following (111) direction; by using two temperature growth, the nanowires were grown free from structural defects, such as twin defects and stacking faults. Systematic experiments about buffer layers indicate that V/III ratio of precursor and growth temperature can affect the morphology and quality of the buffer layers. Especially, heterostructural buffer layers grown with different V/III ratios and temperatures and in-situ post-annealing step are very helpful to grow well arranged, vertical GaAs nanowires on Si substrates. The initial nanowires having some structural defects can be defect-free by two-temperature growth mode with improved optical property, which shows us positive possibility for optoelectronic device application. ©2010 IEEE.
|Uncontrolled Keywords:||Defect-free Epitaxial growth GaAs MOCVD Nanowire Si substrate|
|Depositing User:||Cron job|
|Date Deposited:||04 Feb 2015 22:58|
|Last Modified:||05 Feb 2015 01:15|