Paiman, S and Gao, Q and Joyce, HJ and Tan, HH and Jagadish, C and Kim, Y and Guo, Y and Zou, J (2010) Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD. pp. 37-38.Full text not available from this repository.
Growth of Au-catalyzed InP nanowires (NWs) by metalorganic chemical vapor deposition (MOCVD) has been studied in the temperature range of 400-510 °C and V/III ratio of 44-700. We demonstrate that minimal tapering of InP NWs can be achieved at 400 °C and V/III ratio of 350. Zinc-blende (ZB) or wurtzite (WZ) NWs is obtained depending on the growth conditions. 4K microphotoluminescence (μ-PL) studies show that emission energy is blue-shifted as growth temperature increases. By changing these growth parameters, one can tune the emission wavelength of InP NWs which is attractive for applications in developing novel optoelectronic devices. © 2010 IEEE.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
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|Date Deposited:||15 Dec 2015 13:33|
|Last Modified:||08 Feb 2016 00:49|