CUED Publications database

Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD

Guo, YN and Zou, J and Joyce, HJ and Gao, Q and Tan, HH and Jagadish, C (2010) Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD. pp. 51-52.

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Abstract

The sidewall facets of GaAs nanowires (NWs) were studied. It has been found that the sidewalls of GaAs NWs grown at 450 °C are {112} facets. However, the sidewalls of GaAs NWs start to become {110} during the postannealing at 650 °C for 30 min. © 2010 IEEE.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron job
Date Deposited: 16 Jul 2015 14:07
Last Modified: 04 Sep 2015 04:26
DOI: 10.1109/COMMAD.2010.5699774